any changing of specification will not be informed individual PZT195 pnp silicon planar h t t p : / / w w w . s e c o s g m b h . c o m e l e k t r o n i s c h e b a u e l e m e n t e f e a t u r e s * - 6 0 v o l t a g e v c e o . * 1 a m p s c o n t i n u o u s c u r r e n t . * c o m p l e m e n t a r y t o p z t 1 9 4 m e c h a n i c a l d a t a c a s e : s o t - 2 2 3 p l a s t i c p a c k a g e w e i g h t : a p p r o x . 0 . 0 2 1 g m a r k i n g c o d e : 1 9 5 r o h s c o m p l i a n t p r o d u c t 01-jun-2002 rev. a page 1 of 2 s (t j = 25 o c unless otherwise noted) medium power transistor b c e c sot-223 f f f f e e f e f e e f 5 5 f e 1 2 3 1. base f maxim junction temperature um ratings and thermal characteristics parameter symbol value unit collector-emitter voltage v ceo - 60 v collector-base voltage v cbo - 80 v emitter-base voltage v ebo - 5 v collector current (dc) i c - 1 total p o w er dissipation p d w 2.0 storage temperature tstg -55 to +150 notes: device on alumina substrate. a a collector current (pulse) i c -0.2 (t a = 25 o c unless otherwise noted) - 2. collector 3. emitter t j +150 o o c c parameter symbol min typ. max unit test conditions collector-base breakdown voltage bv cbo -80 - - v i c =-100ua, i e =0 collector- emitter breakdown voltage *bv ceo -60 - - v i c =-10ma, i b =0 emitter-base breakdown voltage bv ebo -5 - - v i e =-100ua, i c =0 collector- emmiter breakdown voltage i cbo - - -100 na vcb=-60v, ie=0 collector-base cutoff current i ces - - -100 na vces=-60v emitter-base cutoff current i ebo - - -100 na veb=-4v, ic=0 *v ce(sat) 1 - - -0.3 v ic=-500ma, ib=- 50ma *v ce(sat) 2 - - -0.6 v ic=-1a, ib=- 100ma *v be(sat) - - -1.2 v ic=-1a, ib=- 100ma *v be(on) - - -1.0 v vce=-5v, ic=-1a *h fe 1 100 - - - vce=-5v, ic =1ma *h fe 2 100 - 300 - vce=- 5v, ic= -500ma *h fe 3 80 - - - vce=- 5v, ic=-1a *h fe 4 15 - - - vce=- 5v, ic=-2a ft 150 - - mhz vce=-10v, ic=-50ma, f=100mhz cob - - 10 pf vcb= -10v, ie=0, f=1mhz electrical characteristic collector saturation voltage 1 collector saturation voltage 2 base saturation voltage base- emitter voltage dc current gain 1 dc current gain 2 dc current gain 3 dc current gain 4 gain-bandwidth product output capacitance www..net
any changing of specification will not be informed individual PZT195 pnp silicon planar 01-jun-2002 rev. a page 2 of 2 http://www.secosgmbh.com elektronische bauelemente medium power transistor characteristics curve
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